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Ketai new materials can provide customization of any combination of materials with almost all elements (except radioactive elements) in the "yuansuo periodic table". Some products have not been updated in time. Please consult customer service for special customization needs.

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IGZO sputtering targets (In2O3-Ga2O3-ZnO)

IGZO sputtering targets (In2O3-Ga2O3-ZnO)
  • IGZO sputtering targets (In2O3-Ga2O3-ZnO)
IGZO sputtering targets (In2O3-Ga2O3-ZnO)essential information
Molecular formulaIn2O3-Ga2O3-ZnO
purity99.99%
CAS No
Molar mass
density
melting point
boiling point
Solubility (water)

IGZO sputtering targets (In2O3-Ga2O3-ZnO)Product overview

IGZO sputtering targets (In2O3-Ga2O3-ZnO)Product application

IGZO is an amorphous oxide containing indium, gallium and zinc, and its carrier mobility is 20-30 times that of amorphous silicon. IGZO is used as a channel material in the new generation high-performance thin film transistor (tft), which can greatly improve the charging and discharging rate of TFT to the pixel electrode, improve the response speed of pixels, and achieve faster refresh rate. At the same time, faster response also greatly improves the line scanning rate of pixels, making it possible for ultra-high resolution in TFT-LCD.

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