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Ketai new materials can provide customization of any combination of materials with almost all elements (except radioactive elements) in the "yuansuo periodic table". Some products have not been updated in time. Please consult customer service for special customization needs.

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Zinc oxide doped with silicon oxide sputtering targets(ZnO-SiO2)

Zinc oxide doped with silicon oxide sputtering targets(ZnO-SiO2)
  • Zinc oxide doped with silicon oxide sputtering targets(ZnO-SiO2)
Zinc oxide doped with silicon oxide sputtering targets(ZnO-SiO2)essential information
Molecular formulaZnO-SiO2
purity99.99%
CAS No
Molar mass
density
melting point
boiling point
Solubility (water)

Zinc oxide doped with silicon oxide sputtering targets(ZnO-SiO2)Product overview

Zinc oxide doped with silicon oxide sputtering targets(ZnO-SiO2)Product application

As a new wide band gap semiconductor material, ZnO is not only rich in raw materials, non-toxic, but also has excellent photoelectric, piezoelectric, gas sensitivity and other properties, which makes it easy to realize doping. ZnO doped SiO2 film has good hardness, optical, dielectric properties, wear resistance, corrosion resistance, mechanical and other properties, and has broad application prospects in optical, microelectronic and other fields

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About
Company Profile
Development History
Customer Presentation
Production Equipmen
Honorary Qualification
Products
Sputtering Targets
Evaporation Materials
Compound Semiconductor Materials
Rare Earth Materials
Special Alloy
Application
5G Field
Optical field
Semiconductor chip
Electronic device
Aerospace
Service
Analysis and detection
Technical service
Technical consultation
News
Company news
Industry information
Company event
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Contact information
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