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Carbide Sputtering Targets Deselectsilicon carbide Sputtering targets(SiC)essential information | |
Molecular formula | SiC |
purity | 99.5% |
CAS No | 409-21-2 |
Molar mass | 40.097 |
density | 3.22 g/cm3 |
melting point | |
boiling point | |
Solubility (water) |
silicon carbide Sputtering targets(SiC)Product application |
Silicon carbide is the third generation of semiconductor materials, with wide band gap, high thermal conductivity, high saturation drift velocity of electrons, high critical breakdown electric field, low dielectric constant, and good chemical stability. It has a wide range of applications in high-frequency, high-power, high-temperature, radiation resistant semiconductor devices and ultraviolet detector lamps.