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Ketai new materials can provide customization of any combination of materials with almost all elements (except radioactive elements) in the "yuansuo periodic table". Some products have not been updated in time. Please consult customer service for special customization needs.

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silicon carbide Sputtering targets(SiC)

silicon carbide Sputtering targets(SiC)
  • silicon carbide Sputtering targets(SiC)
silicon carbide Sputtering targets(SiC)essential information
Molecular formulaSiC
purity99.5%
CAS No409-21-2
Molar mass40.097
density3.22 g/cm3
melting point
boiling point
Solubility (water)

silicon carbide Sputtering targets(SiC)Product overview

silicon carbide Sputtering targets(SiC)Product application

Silicon carbide is the third generation of semiconductor materials, with wide band gap, high thermal conductivity, high saturation drift velocity of electrons, high critical breakdown electric field, low dielectric constant, and good chemical stability. It has a wide range of applications in high-frequency, high-power, high-temperature, radiation resistant semiconductor devices and ultraviolet detector lamps.

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