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锗锑碲GST靶材(Ge2Sb2Te5)essential information | |
Molecular formula | Ge2SbTe5 |
purity | 99.999% |
CAS No | |
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density | |
melting point | |
boiling point | |
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锗锑碲GST靶材(Ge2Sb2Te5)Product application |
相变存储器作为一种新型的非易失性半导体存储器,因其具有读取速度快、可擦写次数高、非破坏性读取、器件尺寸小和功耗低等性能,被认为具有同事替代内存和闪存的潜力,发展前景广阔,Ge-Sb-Te系列合金是目前公认较为成熟的相变材料,尤以Ge2Sb2Te5(GST)综合性能较优。